Temperature stability: to 0.1 ppb in (-40 +80)° C
Aging at 10 MHz: to 0.1 ppb/day,
20 ppb/year
Allan variance:
to 1.5 x10^-12/1s
Phase-noise at 10 MHz operation frequency:
-105 dBc/Hz @ 1 Hz,
-135 dBc/Hz @ 10 Hz,
-160 dBc/Hz @ 1 kHz,
-170 dBc/Hz @ 10 kHz.
Power consumption: < 1.2 W
Input voltage: 3.3 V or 5.0 V
Output waveform: sinewave or CMOS
Operational frequency range:
5-100 MHz
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Power consumption at 25 C:
<90 mW for (-40 +85)°C,
<50 mW for (0 +50)°C
Temperature stability: to 0.5 ppb,
(-40 +85)°C
Aging :to 0.1 ppb/day, 20 ppb/year
Allan variance: to 3x10^-12/1s
Phase-noise level:
-105 dBc/Hz @ 1 Hz,
-173 dBc/Hz floor
G-sensitivity: to 0.3 ppb/g (worst direction)
Warm-up time: < 90 s
Input voltage: 3.3 V, 5 V
Output waveform: sinewave or CMOS
Miniature DIP8, DIP14 compatible
or hermetically sealed 20x20x14 mm
Fundamental operation at 8-150 MHz
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Smallest in the class OCXO with 15х15х8mm DIP compatible sizes
Very low power consumption: < 130 mW in steady state
High frequency vs. temperature stability: to 5 ppb over (-40 +85)°C
Low aging: to 0.1 ppb/day, 15ppb/year
Short warm up time: to 30 s
Low phase-noise level (100 MHz): -105 dBc/Hz@10 Hz, -170 dBc/Hz @10 kHz
Fundamental operation at from 8 to 150 MHz frequency





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