Performances |
High stability low phase-noise |
High mechanica durability |
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MXOCR
20.2х20.2хH; H=10.6 12.5, 13.2 мм
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MXOCI
25.8х25.8хH; H=10.8, 12.5, 13.5 мм
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MXOCE
135.4х26.7хH; H=11.0, 13.0, 13.6 мм
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MXOCS
25.4х22.0хH; H=11.2, 12.9 мм
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MXODE
35.4х26.7х16.6 мм
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MXODR
20.2х20.2хH; H=13.2, 14.6 мм
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Frequency rage, MhzFundamental/Multiplication |
5-150/24-300 |
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Stability in (-40 +85)°C, ppbat 10MHz/100MHz |
1/5 | 0.05/0.5 | 0.1/1 | |||
Aging, ppb/day
|
0.1/1 | 0.1/1 | 0.1/11 | |||
Power consumption |
to 130mW | < 220 mW | ||||
Warm-up time to 0.1 ppm |
<180 s | < 60 s typ | ||||
Phase-noise at 10MHz/100MHz, dBc/Hz@ 1 Hz@ 10 Hz@ 1 kHz@ 10 kHz |
-115 -140/105 -160/160 -170/170 |
-110 -135/105 -150/160 -170/170 |
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Allan variance tau = 1 s |
5E-13 | 3E-12 | ||||
Mechanical durabilityto shocksand vibration |
to 500 g, 1 ms | to 150 g, 3 ms | 300 g, 1 ms | |||
G-sensitivity |
to 0.3 ppb/g | |||||
Supply voltage/output |
3.3V, 5.0 V or 12 V/CMOS or sine wave |